Level set modeling of transient electromigration grooving
نویسندگان
چکیده
منابع مشابه
Level set modeling of transient electromigration grooving q
A numerical investigation of grain-boundary (GB) grooving by means of the level set (LS) method is carried out. GB grooving is emerging as a key element of electromigration (EM) drift in polycrystalline microelectronic (ME) interconnects, as evidenced by a number of recent studies. The purpose of the present study is to provide an ecient numerical simulation, allowing a parametric study of the...
متن کاملNumerical Simulation of Grain-Boundary Grooving by Level Set Method
A numerical investigation of grain-boundary grooving by means of a level set method is carried out. An idealized polycrystalline interconnect which consists of grains separated by parallel grain boundaries aligned normal to the average orientation of the surface is considered. Initially, the surface diffusion is the only physical mechanism assumed. The surface diffusion is driven by surface-cur...
متن کاملTransient Modeling of Electromigration and Lifetime Analysis of Power Distribution Network for 3D ICs
In this paper, we present a transient modeling of electromigration (EM) in TSV and TSV-to-wire interfaces in the power delivery network (PDN) of 3D ICs. In particular, we model atomic depletion and accumulation, effective resistance degradation, and full chip-scale PDN lifetime degradation due to EM. Our major focuses are on: (1) timedependent multi-physics EM modeling approach to model TSVs an...
متن کاملModeling of waterjet guided laser grooving of silicon
Waterjet guided laser processing is an internationally patented technique based on guiding a laser inside a thin, high-speed waterjet. The process combines the advantages of laser processing with those of waterjet cutting and offers promise as a method for processing thin and heat sensitive materials with a high degree of precision. An improved understanding of the complex interaction between l...
متن کاملModeling Electromigration Lifetimes of Copper Interconnects
A model for early failure due to electromigration in copper dualdamascene interconnects is proposed. The model is based on analytical expressions obtained from solutions of electromigration stress build-up assuming slit void growth under the interconnect vias. It is demonstrated that the model satisfactorily describes the complex physics of void nucleation and growth of the electromigration dam...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Computational Materials Science
سال: 2001
ISSN: 0927-0256
DOI: 10.1016/s0927-0256(00)00179-8